Bandgap　engineering　is　a　common　practice　for　tuning　semiconductors　for　desired　physical　properties.　Although　possible　strain　effects　in　semiconductors　have　been　investigated　for　over　a　half-century,　a　profound　understanding　of　their　influence　on　energy　bands,　especially　for　large　elastic　strain　remains　unclear.　In　this　study,　a　systematic　investigation　of　the　transport　properties　of　n-type　[0001]　ZnO　nanowires　was　performed　at　room　temperature　using　the　in　situ　scanning　tunnelling　microscope-transmission　electron　microscope　technique　which　shows　that　the　transport　properties　vary　with　the　applied　external　uniaxial　strain.　It　has　been　found　that　the　resistance　of　ZnO　nanowires　decreases　continuously　with　increasing　compressive　strain,　but　increases　under　increased　tensile　strain,　suggesting　piezo-resistive　characteristics.　A　series　of　near-band-edge　emissions　were　measured　and　the　corresponding　variations　of　bandgaps　were　obtained　during　the　application　of　tensile　strain　of　individual　ZnO　nanowires　via　cathodoluminescence　spectroscopy.　From　this,　a　relationship　between　the　changes　of　energy　bandgap　and　the　transport　properties,　both　induced　by　uniaxial　strain,　is　built.