Ordered　and　dense　GaN　light　emitting　nanorods　are　studied　with　polycrystalline　graphene　grown　by　rapid　chemical　vapor　deposition　as　suspended　transparent　electrodes.　As　the　substitute　of　indium　tin　oxide,　the　graphene　avoids　complex　processing　to　fill　up　the　gaps　between　nanorods　and　subsequent　surface　flattening　and　offers　high　conductivity　to　improve　the　carrier　injection.　The　as-fabricated　devices　have　32%　improvement　in　light　output　power　compared　to　conventional　planar　GaN-graphene　diodes.　The　suspended　graphene　remains　electrically　stable　up　to　300　degrees　C　in　air.　The　graphene　can　be　obtained　at　low　cost　and　high　efficiency,　indicating　its　high　potential　in　future　applications.　(C)　2013　AIP　Publishing　LLC.