The　laser　wavelength　plays　an　important　role　in　achieving　high　density　in　optical　storage.　Previous　studies　on　the　phase　transition　were　mainly　focused　on　the　range　from　infrared　to　visible　waveband.　In　this　work,　crystallization　of　amorphous　Ge2Sb2Te5　thin　film　induced　by　an　ultraviolet　laser　with　the　wavelength　of　248　nm　was　investigated.　The　crystallization　behavior　of　Ge2Sb2Te5　thin　films　was　analyzed　using　X-ray　diffraction,　atomic　force　microscopy,　Raman　scattering　and　scanning　electron　microscope.　Based　on　the　X-ray　diffraction　pattern　results,　the　phase　transition　from　the　amorphous　Ge2Sb2Te5　to　the　face-centered　cubic　crystallized　Ge2Sb2Te5　was　obtained　with　the　laser　fluence　in　the　range　of　24.4-66.6　mJ/cm(2).　Atomic　force　microscopy　images　showed　that　the　inhomogeneous　crystalline　structure　with　the　grain　size　ranging　from　tens　of　nanometer　to　250　nm　was　produced　in　spite　of　the　lower　laser　fluence　of　24.4　mJ/cm(2).　This　structure　can　be　attributed　to　the　ultrafast　violet　laser　radiance.　A　new　peak　at　140　cm(-1)　caused　by　the　segregation　of　Te　crystalline　was　possibly　due　to　the　higher　photon　energy　absorbed　by　the　ultraviolet　laser　radiance.　This　work　is　of　significance　for　the　optical　storage　in　developing　new　applications　by　ultraviolet　laser.　(C)　2013　Elsevier　B.V.　All　rights　reserved.