In　this　work,　two　perovskite-type　compounds,　K0.5Bi0.5TiO3　and　LaAlO3,　have　been　selected　as　host　material　to　incorporate　with　BiAlO3　using　a　solid-state　reaction　route.　The　phase　evolution　and　dielectric　properties　for　both　systems　have　been　investigated　in　detail.　For　the　K0.5Bi0.5TiO3-BiAlO3　system,　it　is　interesting　to　find　that　when　using　Bi2O3,　Al2O3,　K2CO3,　and　TiO2　as　starting　materials,　the　formed　compounds　are　K0.5Bi0.5TiO3-K0.5Bi4.5Ti4O15　and　Al2O3　only　plays　a　dopant　role.　There　are　two　distinct　dielectric　peaks　appearing　in　the　patterns　of　temperature　dependence　of　dielectric　constant,　corresponding　to　the　phase-transition　points　of　perovskite-type　K0.5Bi0.5TiO3　and　Aurivillius-type　K0.5Bi4.5Ti4O15,　independently.　In　comparison,　using　Bi2O3,　Al2　O3,　and　La2O3　as　starting　materials,　the　pure　perovskite　phase　LaAlO3-BiAlO3　can　be　obtained.　Compared　to　the　inherent　paraelectric　behavior　in　LaAlO3,　the　diffuse　phase-transition　phenomena　can　be　observed　in　the　LaAlO3-BiAlO3　binary　system,　which　corresponds　well　to　the　Vogel-Fulcher　(VF)　relationship.　Moreover,　compared　to　pure　LaAlO3,　the　synthesized　LaAlO3BiAlO3　compound　shows　enhanced　dielectric　properties,　which　are　promising　in　application　as　gate　dielectric　materials.　(C)　2013　WILEY-VCH　Verlag　GmbH　&　Co.　KGaA,　Weinheim