Cu2ZnSnSe4　(CZTSe)　thin　films　were　prepared　by　selenization　of　co-electrodeposited　Cu-Zn-Sn　precursors,　which　were　electrodeposited　on　Mo-coated　glass　substrates　in　one-step　process.　Two　annealing　processes,　rapid　thermal　annealing　(RTA)　and　conventional　furnace　annealing　(CFA),　were　carried　out　for　selenizing　the　precursors　at　500　degrees　C.　The　structure　and　morphology　of　the　CZTSe　thin　films　were　characterized　using　X-ray　diffraction　(XRD),　Raman　spectroscopy,　scanning　electron　microscopy　(SEM),　and　energy　dispersive　X-ray　spectroscopy　(EDS).　It　is　found　that　the　RTA　process　benefits　the　formation　of　single　phase　CZTSe　absorbers　with　large　grains　and　the　energy　band　gap　of　CZTSe　film　is　0.98　eV.　Photovoltaic　cells　with　the　structure　of　glass/Mo/CZTSe/CdS/i-ZnO/ZnO:Al　were　fabricated　using　the　RTA-CZTSe　films　as　absorbers.　The　highest　efficiency　of　4.5%　so　far　for　a　co-electrodeposited　CZTSe　solar　cell　was　achieved.　(C)　2013　Elsevier　Ltd.　All　rights　reserved.