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作者:

Xiao, H. (Xiao, H..) | Li, X. Y. (Li, X. Y..) | Zhu, Y. X. (Zhu, Y. X..) | Yang, J. L. (Yang, J. L..) | Chen, J. (Chen, J..) | Guo, F. (Guo, F..) (学者:郭福)

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EI Scopus SCIE

摘要:

The intermetallic compound (IMC) growth behavior at SnAgCu/Cu solder joint interface under different thermal aging conditions was investigated, in order to develop a framework for correlating IMC layer growth behavior between isothermal and thermomechanical cycling (TMC) effects. Based upon an analysis of displacements for actual flip-chip solder joint during temperature cycling, a special bimetallic loading frame with single joint-shear sample as well as TMC tests were designed and used to research the interfacial IMC growth behavior in SnAgCu/Cu solder joint, with a focus on the influence of stress-strain cycling on the growth kinetics. An equivalent model for IMC growth was derived to describe the interfacial Cu-Sn IMC growth behavior subjected to TMC aging as well as isothermal aging based on the proposed "equivalent aging time" and "effective aging time". Isothermal aging, thermal cycling (TC) and TMC tests were conducted for parameter determination of the IMC growth model as well as the growth kinetic analysis. The SnAgCu/Cu solder joints were isothermally aged at 125, 150 and 175 degrees C, while the TC and TMC tests were performed within the temperature range from -40 to 125 degrees C. The statistical results of IMC layer thickness showed that the IMC growth for TMC was accelerated compared to that of isothermal aging based on the same "effective aging time". The IMC growth model proposed here is fit for predicting the IMC layer thickness for SnAgCu/Cu solder joint after any isothermal aging time or thermomechanical cycles. In addition, the results of microstructure evolution observation of SnAgCu/Cu solder joint subjected to TMC revealed that the interfacial zone was the weak link of the solder joint, and the interfacial IMC growth had important influence on the thermomechanical fatigue fracture of the solder joint.

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作者机构:

  • [ 1 ] [Xiao, H.]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Li, X. Y.]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Zhu, Y. X.]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Yang, J. L.]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Chen, J.]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Guo, F.]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100124, Peoples R China

通讯作者信息:

  • [Xiao, H.]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100124, Peoples R China

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来源 :

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

ISSN: 0957-4522

年份: 2013

期: 7

卷: 24

页码: 2527-2536

2 . 8 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:263

JCR分区:1

中科院分区:3

被引次数:

WoS核心集被引频次: 17

SCOPUS被引频次: 21

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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