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作者:

Wang, Hong (Wang, Hong.) | Li, Hongyi (Li, Hongyi.) (学者:李洪义) | Wang, Jinshu (Wang, Jinshu.) (学者:王金淑) | Wu, Junshu (Wu, Junshu.) | Liu, Man (Liu, Man.)

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摘要:

Highly ordered titanium dioxide (TiO2) nanotube films have been fabricated using anodic oxidation at different voltages (10 V to 70 V). The morphology, specific surface area, light absorbance capability and conductivity of the obtained films have been investigated. The anodized voltage was found to have a crucial influence on the morphology, light absorb capability and photo-electrochemical properties of the anodized nanotube films. The diameter of the nanotube increases linearly with the applied voltage. The nanotube film anodized at 30 V has the highest BET (Brunauer-Emmett-Teller) surface area, much more quantity of coated sensitizer N719, and the smallest resistance for dye sensitized solar cells (DSSC). Back side illuminated DSSC were assembled using these as-anodized nanotube films. Pt FTO, which has a transmittance of about 50%, served as counter electrode. The best device based on nanotube films performed at 30 V gives a highest power conversion efficiency of 1.87%, with a photocurrent density (J(sc)) of 6.70 mA/cm(2) and open circuit voltage (V-oc) of 0.57 V.

关键词:

Anodization DSSC TiO2 Naotube Arrays

作者机构:

  • [ 1 ] [Wang, Hong]Beijing Univ Technol, Coll Mat & Engn, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 2 ] [Li, Hongyi]Beijing Univ Technol, Coll Mat & Engn, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 3 ] [Wang, Jinshu]Beijing Univ Technol, Coll Mat & Engn, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 4 ] [Wu, Junshu]Beijing Univ Technol, Coll Mat & Engn, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 5 ] [Liu, Man]Beijing Univ Technol, Coll Mat & Engn, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China

通讯作者信息:

  • 李洪义

    [Li, Hongyi]Beijing Univ Technol, Coll Mat & Engn, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China

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来源 :

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

ISSN: 1533-4880

年份: 2013

期: 6

卷: 13

页码: 4183-4188

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:263

JCR分区:3

中科院分区:3

被引次数:

WoS核心集被引频次: 19

SCOPUS被引频次: 22

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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