Aligned　gallium　nitride　(GaN)　nanowires　were　catalytically　synthesized　in　a　plasma-enhanced　hot　filament　chemical　vapor　deposition　system,　in　which　GaN　powder　and　nitrogen　were　used　for　the　gallium　and　nitrogen　sources,　respectively.　The　results　of　scanning　electron　microscope,　X-ray　diffractometer,　micro-Raman　spectroscopy　and　transmission　electron　microscope　indicate　that　the　n-type　GaN　nanowires　with　different　diameters　are　formed　in　wurtzite　crystal　structure.　Combined　the　vapor-liquid-solid　growth　mechanism　with　the　plasma-related　effects,　the　formation　of　n-type　GaN　nanowires　with　different　diameters　was　analyzed.　The　electrical　property　of　a　single　GaN　nanowire　was　measured　in　transmission　electron　microscope　at　room　temperature　and　the　result　indicates　that　the　current-voltage　curve　exhibits　a　nonlinear　behavior　and　a　double　diode-like　characteristic.　In　particular,　the　double　diode-like　characteristic　is　highly　related　to　the　application　of　GaN　nanowires　in　the　area　of　nano-diode　devices　such　as　alternating　current　limiter.　(C)　2013　Elsevier　Ltd.　All　rights　reserved.