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[期刊论文]

Effect of oxygen pressure on electrical transport properties for (110) oriented La2/3Sr1/3MnO3 films directly deposited on silicon

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Author:

Li Tingxian (Li Tingxian.) | Li Kuoshe (Li Kuoshe.) | Yu Dunbo (Yu Dunbo.) | Unfold

Indexed by:

EI Scopus SCIE CSCD

Abstract:

La2/3Sr1/3MnO3 films with (110) preferred orientation were deposited on Si (100) substrate without any buffer layer by pulsed laser deposition technique. Effect of oxygen pressure on orientation, surface morphology, and electrical transport properties were investigated. The film deposited at 10 Pa presented (110) preferred orientation with the best crystalline quality, the largest grain size, and the smallest roughness. The (110) oriented film presented higher metal-insulator transition temperature, and the lower resistivity than that of the samples without preferred orientation.

Keyword:

electrical transport colossal magnetoresistive film LSMO rare earths pulsed laser deposition

Author Community:

  • [ 1 ] [Li Tingxian]Anyang Normal Univ, Coll Phys & Elect Engn, Anyang 455000, Peoples R China
  • [ 2 ] [Yu Fengjun]Anyang Normal Univ, Coll Phys & Elect Engn, Anyang 455000, Peoples R China
  • [ 3 ] [Li Kuoshe]Grirem Adv Mat Co Ltd, Gen Res Inst Nonferrous Met, Natl Engn Res Ctr Rare Earth Mat, Beijing 100088, Peoples R China
  • [ 4 ] [Yu Dunbo]Grirem Adv Mat Co Ltd, Gen Res Inst Nonferrous Met, Natl Engn Res Ctr Rare Earth Mat, Beijing 100088, Peoples R China
  • [ 5 ] [Zhang Feipeng]Henan Univ Urban Construct, Dept Math & Phys, Pingdingshan 467036, Peoples R China
  • [ 6 ] [Zhang Ming]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Li Tingxian]Anyang Normal Univ, Coll Phys & Elect Engn, Anyang 455000, Peoples R China

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Source :

JOURNAL OF RARE EARTHS

ISSN: 1002-0721

Year: 2013

Issue: 4

Volume: 31

Page: 376-380

4 . 9 0 0

JCR@2022

ESI Discipline: CHEMISTRY;

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 1

30 Days PV: 3

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