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作者:

Ding, Chunbao (Ding, Chunbao.) | Zhang, Wanrong (Zhang, Wanrong.) (学者:张万荣) | Jin, Dongyue (Jin, Dongyue.) | Xie, Hongyun (Xie, Hongyun.) | Zhao, Yanxiao (Zhao, Yanxiao.) | Fu, Qiang (Fu, Qiang.) | Ju, Jiaxin (Ju, Jiaxin.)

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EI Scopus SCIE

摘要:

An inductorless Cascade SiGe low noise amplifier (LNA) that achieves high linearity using tunable active feedback and post-linearization technique is proposed for ultra-wideband (UWB) application. Tunable active feedback composed of NMOS and parallel resistor is adopted to improve the linearity instead of the resistor feedback. The tunablity of active feedback can compensate the gain and bandwidth degradation due to the process variation and parasitic parameters. The post-linearization technique by the use of resistance-capacitance (RC) parallel network with an additional diode connected transistor further improves the linearity. Theoretical analysis is performed using Volterra series to obtain an insight into the linearity behavior over the UWB frequency range. The LNA is implemented using TSMC 0.35 mu m SiGe BiCMOS technology. Compared with the conventional Cascode LNA, IIP3 of the proposed LNA is improved by 51 dBm. Meanwhile, the novel LNA exhibits superior variation of group delay 1 PS, and achieves the noise figure of 3.8 similar to 4.9 dB, the gain of 8.8 similar to 10.2 dB, gain flatness of +/- 0.7 dB, good input and output impedances matching, and unconditional stablity in the whole band. (C) 2013 Elsevier Ltd. All rights reserved.

关键词:

Post-linearization Tunable active resistance feedback Low noise amplifier Ultra-wideband

作者机构:

  • [ 1 ] [Ding, Chunbao]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Zhang, Wanrong]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Jin, Dongyue]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Xie, Hongyun]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Zhao, Yanxiao]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Fu, Qiang]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 7 ] [Ju, Jiaxin]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China

通讯作者信息:

  • 张万荣

    [Zhang, Wanrong]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China

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来源 :

MICROELECTRONICS JOURNAL

ISSN: 0026-2692

年份: 2013

期: 4

卷: 44

页码: 315-320

2 . 2 0 0

JCR@2022

ESI学科: ENGINEERING;

JCR分区:3

中科院分区:4

被引次数:

WoS核心集被引频次: 7

SCOPUS被引频次: 8

ESI高被引论文在榜: 0 展开所有

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