The　non-equilibrium　tetragonal　t＇　phase　of　yttria-stabilized　zirconia　(YSZ)　plays　a　key　role　in　improving　the　toughness　of　YSZ　ceramics　owing　to　its　own　ferroelastic　domain　toughening　mechanism.　Due　to　the　disadvantages　of　traditional　processes　for　preparing　the　YSZ　t＇　phase,　which　requires　high　heating　temperature,　difficult　to　control　defects　and　inability　to　regulate　microstructure,　it　is　not　conducive　to　the　preparation　of　YSZ　by　these　methods.　We　report　the　use　of　substrate　clamping　and　non-equilibrium　growth　process　of　PLD　to　render　stable　t＇　epitaxial　YSZ　films　with　multiple　domain　structure　on　(0001)　Al2O3　substrates.　Thin　film　structure　and　epitaxial　relationship　with　substrate　were　subsequently　analyzed　by　XRD,　RSM,　and　HRTEM.　It　was　found　that　the　crystal　orientation　of　the　YSZ　film　changes　as　a　function　of　oxygen　pressure　during　deposition.　When　oxygen　pressure　is　larger　than　100　mtorr,　YSZ　films　with　highly　oriented　ferroelastic　domains　are　obtained.　Based　on　the　symmetry　relationship,　we　know　that　the　film　has　three　in-plane　domain　structures.　The　epitaxial　relationship　between　the　film　and　the　substrate　is　(002)　[110]　YSZ　//　(0001)　[11　(2)　over　bar0]　Al2O3.