The　electrical　resistivity　of　the　as-consolidated　and　coarse-grained　bulk　gadolinium　(Gd)　metals　was　studied　in　the　temperature　range　of　3-315　K.　The　experimental　results　showed　that　with　decrease　in　the　grain　size　of　Gd　grains　from　micrometer　to　nanometer　range,　the　room　temperature　electrical　resistivity　increased　from　209.7　to　333.0　mu　Omega　cm,　while　the　electrical　resistivity　at　the　low　temperature　of　3　K　was　found　to　increase　surprisingly　from　16.5　to　126.3　mu　Omega　cm.　The　room　temperature　coefficient　resistivity　(TCR)　values　were　obtained　as　39.2　x　10(-3),　5.51　x　10(-3)　and　33.7　x　10(-3)　K-1.　The　ratios　of　room　temperature　to　residual　resistivity　[RRR=rho(300　K)/rho(3　K)]　are　2.64,　11.0,　respectively,　for　the　as-consolidated　samples　at　280　degrees　C　and　700　degrees　C　with　respect　to　that　of　the　coarse-grained　sample.　All　results　indicate　the　remarkable　influence　of　the　nanostructure　on　the　electrical　resistivity　of　Gd　due　to　the　finite　size　effect　and　large　fraction　of　grain　boundaries.　(C)　2013　Chinese　Materials　Research　Society.　Production　and　hosting　by　Elsevier　B.V.　All　rights　reserved.