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作者:

Zheng, Mupeng (Zheng, Mupeng.) | Hou, Yudong (Hou, Yudong.) (学者:侯育冬) | Ge, Haiyan (Ge, Haiyan.) | Zhu, Mankang (Zhu, Mankang.) | Yan, Hui (Yan, Hui.)

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EI Scopus SCIE

摘要:

Piezoelectric ceramics system of Pb((Zn1/3Nb2/3)(0.20)(Zr0.50Ti0.50)(0.80))O-3 (0.2PZN-0.8PZT) was prepared by the conventional oxide mixing method. The dependences of the internal-bias field and electric properties on the sintering temperature were investigated systematically. The results indicated that the perovskite structure was stable in a wide sintering temperature region. The rise of sintering temperature favored the enlargement of the grain size, while showing a slight effect on tetragonal distortion c/a. The dissymmetrical shape of polarization-electric field hysteresis loops was displayed in all specimens, indicating the existence of internal-bias field (E-i). With the increase of sintering temperature, E-i sharply decreased to 0.84 kV cm(-1) at 1000 degrees C then increased, while the remnant polarization (P-r) was found to show the inverse trend. The derivative effects of the sintering temperatures, involving the internal-bias field effect and grain-size effect, affected the ferroelectric and piezoelectric properties of 0.2PZN-0.8PZT. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

关键词:

ceramics ferroelectricity internal-bias field microstructure

作者机构:

  • [ 1 ] [Zheng, Mupeng]Beijing Univ Technol, Dept Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Hou, Yudong]Beijing Univ Technol, Dept Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Ge, Haiyan]Beijing Univ Technol, Dept Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Zhu, Mankang]Beijing Univ Technol, Dept Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Yan, Hui]Beijing Univ Technol, Dept Mat Sci & Engn, Beijing 100124, Peoples R China

通讯作者信息:

  • 侯育冬

    [Hou, Yudong]Beijing Univ Technol, Dept Mat Sci & Engn, Beijing 100124, Peoples R China

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来源 :

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

ISSN: 1862-6300

年份: 2013

期: 2

卷: 210

页码: 261-266

2 . 0 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:162

JCR分区:2

中科院分区:3

被引次数:

WoS核心集被引频次: 16

SCOPUS被引频次: 16

ESI高被引论文在榜: 0 展开所有

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