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作者:

Ma, Limin (Ma, Limin.) | Zuo, Yong (Zuo, Yong.) | Liu, Sihan (Liu, Sihan.) | Guo, Fu (Guo, Fu.) (学者:郭福) | Wang, Xitao (Wang, Xitao.)

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EI Scopus SCIE

摘要:

Currently, the main concerns of Pb-free solder joints are focusing on electromigration (EM) and thermomechanical fatigue (TMF) problems. Many models have been established to understand the failure mechanisms of the joint under such single test conditions. Based on the fact that almost all microelectronic devices serve in combination conditions of fluctuated temperature and electric current stressing, the coupling effects of EM and TMF on evolution of microstructure and resistance of solder joint had been investigated. The failure models of binary SnBi alloy and ternary SnAgCu (SAC) solder under the coupling stressing were divided into four and three different stages, respectively. The failure mechanisms were dominant by the relationship of phase segregation, polarity effect, phase coarsening, and the coefficient of thermal expansion mismatch. Cracks tend to form and propagate along the interface between intermetallic compound layers and solder matrix in SAC solder. However, grain boundary was considered as the nucleation sites for microcracks in SnBi solder. High current density alleviates the deterioration of solder at the beginning stage of coupling stressing through Joule heating effect. An abrupt jump of resistance could be observed before the failure of the joint. The failure molds were determined by interactions of EM behaviors and TMF damages. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789023]

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作者机构:

  • [ 1 ] [Ma, Limin]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Zuo, Yong]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Liu, Sihan]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Wang, Xitao]Univ Sci & Technol Beijing, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China

通讯作者信息:

  • [Ma, Limin]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

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来源 :

JOURNAL OF APPLIED PHYSICS

ISSN: 0021-8979

年份: 2013

期: 4

卷: 113

3 . 2 0 0

JCR@2022

ESI学科: PHYSICS;

JCR分区:2

中科院分区:3

被引次数:

WoS核心集被引频次: 24

SCOPUS被引频次: 29

ESI高被引论文在榜: 0 展开所有

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