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Author:

Liu, Fengjing (Liu, Fengjing.) | Zhang, Yiwei (Zhang, Yiwei.) | Wang, Jiawei (Wang, Jiawei.) | Chen, Yiyi (Chen, Yiyi.) | Wang, Liang (Wang, Liang.) | Wang, Gongtang (Wang, Gongtang.) | Dong, Ji (Dong, Ji.) | Jiang, Chao (Jiang, Chao.)

Indexed by:

EI Scopus SCIE

Abstract:

A sensitive photodetection based on a novel hybrid CMOS inverter has been demonstrated. Unlike common photo-current type photodetectors, which convert optical signals to current, the CMOS inverter realizes voltage-output, overcoming the difficulty to monitor current signal in the range ofnA. The hybrid CMOS logic inverter employs n-channel MoS(2)nanosheet/perovskite heterojunction FET and p-channel organic pentacene FET in a planar architecture. In order to obtain high performance, we adopt the interdigital electrodes for the pentacene FET to enhance the current density of the p-channel, and stack perovskite on the MoS(2)channel to modify the threshold voltage of the n-channel. As a result, a CMOS inverter with a voltage gain of more than ten is obtained. When V(IN)is around the transition voltage (-38 V), the inverter can obtain stable optical detection signal, the V(OUT)changes from 6 V in dark to 1 V under 633 nm light exposure. This finding indicates the potential to fabricate visible light detecting devices with voltage-output based on the inverter and may be further applicable for a photo-logic circuit.

Keyword:

pentacene thin film transistor MoS2 MAPbI(3) CMOS inverter perovskite heterojunction photodetector

Author Community:

  • [ 1 ] [Liu, Fengjing]CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China
  • [ 2 ] [Wang, Liang]CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China
  • [ 3 ] [Dong, Ji]CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China
  • [ 4 ] [Jiang, Chao]CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China
  • [ 5 ] [Liu, Fengjing]Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China
  • [ 6 ] [Wang, Liang]Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China
  • [ 7 ] [Dong, Ji]Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China
  • [ 8 ] [Jiang, Chao]Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China
  • [ 9 ] [Liu, Fengjing]Univ Chinese Acad Sci, Beijing 100049, Peoples R China
  • [ 10 ] [Zhang, Yiwei]Beijing Univ Technol, Sch Phys & Optoelect, Fac Sci, Beijing 100124, Peoples R China
  • [ 11 ] [Wang, Jiawei]Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
  • [ 12 ] [Chen, Yiyi]Shandong Normal Univ, Sch Phys & Elect, Jinan 250358, Peoples R China
  • [ 13 ] [Wang, Gongtang]Shandong Normal Univ, Sch Phys & Elect, Jinan 250358, Peoples R China

Reprint Author's Address:

  • [Jiang, Chao]CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China;;[Jiang, Chao]Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China;;[Zhang, Yiwei]Beijing Univ Technol, Sch Phys & Optoelect, Fac Sci, Beijing 100124, Peoples R China

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Source :

NANOTECHNOLOGY

ISSN: 0957-4484

Year: 2021

Issue: 1

Volume: 32

3 . 5 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:116

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count: 3

SCOPUS Cited Count: 8

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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