Polycrystalline　silicon　(Poly-Si)　thin　films　were　successfully　fabricated　on　soda-lime　glass　substrate　by　aluminum　induced　crystallization　(AIC)　process.　In　order　to　analyze　non-uniform　film　by　AIC,　a　new　method　to　evaluate　the　poly-Si　thin　film　average　crystalline　volume　fraction　is　proposed,　based　on　the　optical　microscope　and　Raman　spectroscopy　results.　This　method　can　obtain　more　accurate　crystallization　fraction　than　the　common　way.　X-ray　diffraction　results　showed　that　the　films　are　strongly　(1　1　1)　orientated.　A　new　region　crystallization　pattern　in　AIC　was　also　proposed.　(C)　2012　Elsevier　B.V.　All　rights　reserved.