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作者:

Guo Wei-Ling (Guo Wei-Ling.) | Yan Wei-Wei (Yan Wei-Wei.) | Zhu Yan-Xu (Zhu Yan-Xu.) | Liu Jian-Peng (Liu Jian-Peng.) | Ding Yan (Ding Yan.) | Cui De-Sheng (Cui De-Sheng.) | Wu Guo-Qing (Wu Guo-Qing.)

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EI Scopus SCIE CSCD

摘要:

In order to investigate their electrical characteristics, high-voltage light-emitting-diodes (HV-LEDs) each containing four cells in series are fabricated. The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors (IFs) of the HV-LEDs with different numbers of cells are 1.6, 3.4, 4.7, and 6.4. IF increases linearly with the number of cells increasing. Moreover, the performance of the HV-LED with failure cells is examined. The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell. The series resistance of the failure cell is 76.8 Omega, while that of the normal cell is 21.3 Omega. The scanning electron microscope (SEM) image indicates that different metal layers do not contact well. It is hard to deposit the metal layers in the deep isolation trenches. The fabrication process of HV-LEDs needs to be optimized.

关键词:

electrical characteristics high-voltage light-emitting diode ideality factor series resistance

作者机构:

  • [ 1 ] [Guo Wei-Ling]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Yan Wei-Wei]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Zhu Yan-Xu]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Liu Jian-Peng]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Ding Yan]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Cui De-Sheng]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Wu Guo-Qing]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

通讯作者信息:

  • [Guo Wei-Ling]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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来源 :

CHINESE PHYSICS B

ISSN: 1674-1056

年份: 2012

期: 12

卷: 21

1 . 7 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:178

JCR分区:3

中科院分区:4

被引次数:

WoS核心集被引频次: 5

SCOPUS被引频次: 9

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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