Phase-change　memory　(PCM)　materials,　such　as　chalcogenide　alloys,　have　the　ability　for　fast　and　reversible　transition　between　their　amorphous　and　crystalline　states.　Owing　to　the　large　optical/electrical　contrast　of　the　two　states,　PCM　materials　have　been　developed　for　data　storage.　It　has　been　generally　accepted　that　thermal　effects,　caused　by　laser　irradiation　or　electrical　pulses,　control　the　amorphization　by　melting　the　sample　and　subsequent　quenching,　while　crystallization　is　realized　by　thermal　annealing.　An　important　element　that　has　not　been　considered　extensively,　however,　is　the　role　of　electronic　excitation　by　optical　or　electrical　pulse.　Strictly　speaking,　until　electrons　and　holes　recombine,　the　system　under　external　stimulus　is　in　a　non-equilibrium　environment,　especially　when　the　excitation　intensity　is　high.　This　raises　an　important　question:　can　the　excitation　alone　induce　phase　transition　for　PCM　data　storage　without　the　usual　thermal　melting?　Here,　we　will　review　the　recent　experimental　and　theoretical　indications　and　evidence　in　support　of　the　electronic　excitation-induced　phase　change　in　PCM　materials　and　discuss　potential　ramifications　of　the　athermal　phase-change　phenomenon　for　data　storage.