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作者:

Liu, X. Q. (Liu, X. Q..) | Li, X. B. (Li, X. B..) | Zhang, B. (Zhang, B..) | Zhang, S. B. (Zhang, S. B..) | Ma, E. (Ma, E..) | Zhang, Z. (Zhang, Z..) | Han, X. D. (Han, X. D..) (学者:韩晓东)

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EI Scopus SCIE

摘要:

Traditional Lorch-window technique was modified to the truncated Lorch-window through various truncation ranges to apply the Lorch-window functions. The terminal ripples in radial distribution functions (RDFs) were weakened and the shoulder peak at 2.6 angstrom in crystalline Ge2Sb2Te5 (GST) was revealed by the indication of the off-octahedral Ge. The Cs-corrected high resolution transmission electron microscopy image and the corresponding simulations suggest that the off-octahedral Ge atoms are indeed in the tetrahedral symmetry. These results indicate that the complex structural details in the intermediate phase of GST other than simple rock-salt structure though the quantified information, such as the accurate atomic positions of the off-octahedral Ge need being further clarified in the future. These results also reveal the significance of high-Q signals in revealing the structures in short range order. Left (a): Original reduced interference function F(Q) (black) and truncated F(Q) data. Right (b): Corresponding RDF curves. L-12 (red half-solid triangle) represent the data with a truncation range of 12 angstrom-1, and L-16 (open square) for the truncation range of 16 angstrom-1.

关键词:

GeSbTe high resolution transmission electron microscopy off-octahedral radial distribution function tetrahedral Ge

作者机构:

  • [ 1 ] [Liu, X. Q.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 2 ] [Zhang, B.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 3 ] [Zhang, Z.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 4 ] [Han, X. D.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 5 ] [Li, X. B.]Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
  • [ 6 ] [Zhang, S. B.]Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
  • [ 7 ] [Ma, E.]Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
  • [ 8 ] [Zhang, Z.]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

通讯作者信息:

  • [Liu, X. Q.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China

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来源 :

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

ISSN: 0370-1972

年份: 2012

期: 10

卷: 249

页码: 1914-1918

1 . 6 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:178

JCR分区:3

中科院分区:4

被引次数:

WoS核心集被引频次: 3

SCOPUS被引频次: 3

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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