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作者:

Reshak, Ali Hussain (Reshak, Ali Hussain.) | Chen, Xuean (Chen, Xuean.) | Auluck, S. (Auluck, S..) | Kamarudin, H. (Kamarudin, H..)

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摘要:

An oxoborate, (Pb3O)(2)(BO3)(2)WO4, has been prepared by solid-state reaction methods below 620 degrees C. Single-crystal XRD analysis shows that it crystallizes in the orthorhombic group Cmcm with a = 18.480(4) angstrom, b = 6.3567(13) angstrom, c = 11.672(2) angstrom. Z = 4. The crystal structure is composed of one-dimensional 1/infinity [Pb3O](4+) chains formed by corner-sharing OPb4 tetrahedra. BO3 and WO4 groups are located around the chains to hold them together via Pb-O bonds. The IR spectra further confirmed the presence of BO3 groups. Furthermore we have performed theoretical calculations by employing the all-electron full potential linearized augmented plane wave (FP-LAPW) method to solve the Kohn Sham equations. Starting from our XRD data we have optimized the atomic positions by minimizing the forces. These are used to calculate the electronic band structure, the atomic site-decomposed density of states, electron charge density and the chemical bonding features. The calculated electronic band structure and densities of states suggest that this oxoborate possesses a wide energy band gap. The valence band maxima and the conduction band minima are located at Y point in the Brillouin zone resulting in a direct energy band gap of 2.3 eV using the local density approximation and 2.6 eV for the Engel-Vosko generalized gradient approximation. This compares well with our experimentally measured energy band gap of 2.9 eV. From our calculated electron charge density distribution, we obtain an image of the electron clouds that surround the molecules in the unit cell of the crystal. The chemical bonding features were analyzed and the substantial covalent interactions are observed between Pb and O, B and O and W and O atoms. (C) 2012 Elsevier Ltd. All rights reserved.

关键词:

Crystal growth Crystal structure: optical properties Optical materials Semiconductors X-ray diffraction

作者机构:

  • [ 1 ] [Reshak, Ali Hussain]CENAKVA S Bohemia Univ CB, FFPW, Sch Complex Syst, Nove Hrady 37333, Czech Republic
  • [ 2 ] [Reshak, Ali Hussain]Malaysia Univ Perlis, Sch Mat Engn, Kangar 01007, Perlis, Malaysia
  • [ 3 ] [Kamarudin, H.]Malaysia Univ Perlis, Sch Mat Engn, Kangar 01007, Perlis, Malaysia
  • [ 4 ] [Chen, Xuean]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Auluck, S.]Natl Phys Lab, New Delhi 110012, India

通讯作者信息:

  • [Reshak, Ali Hussain]FFWP S Bohemia Univ, Sch Complex Syst, Nove Hrady 37333, Czech Republic

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来源 :

MATERIALS RESEARCH BULLETIN

ISSN: 0025-5408

年份: 2012

期: 9

卷: 47

页码: 2552-2560

5 . 4 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:294

JCR分区:2

中科院分区:2

被引次数:

WoS核心集被引频次: 7

SCOPUS被引频次: 6

ESI高被引论文在榜: 0 展开所有

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