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作者:

Wei Si-Min (Wei Si-Min.) | Xu Chen (Xu Chen.) (学者:徐晨) | Deng Jun (Deng Jun.) | Zhu Yan-Xu (Zhu Yan-Xu.) | Mao Ming-Ming (Mao Ming-Ming.) | Xie Yi-Yang (Xie Yi-Yang.) | Xu Kun (Xu Kun.) | Cao Tian (Cao Tian.) | Liu Jiu-Cheng (Liu Jiu-Cheng.)

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摘要:

The performance of the oxide-confined surface-relief (SR) structure vertical-cavity surface-emitting laser (VCSEL) is simulated and analyzed by using the three-dimensional finite-difference time-domain (FDTD) method. The impacts of the device structure parameters on the far-field characteristics are researched. A single-fundamental-mode SR VCSEL with an oxide-aperture of 15 mu m is designed and produced. The single-mode power of the VCSEL is 5 mW, the threshold current is 2.5 mA, far-field divergent angles range from 7.8 degrees to 10.8 degrees and the side-mode suppression ratio is over 30 dB. The optical and electrical properties of the device are in agreement with the results of FDTD simulation, which shows that the SR technology can effectively suppress the higher-order-mode lasing, and make the SR VCSEL work in a single mode under a larger oxide aperture.

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作者机构:

  • [ 1 ] [Wei Si-Min]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Xu Chen]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Deng Jun]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Zhu Yan-Xu]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Mao Ming-Ming]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Xie Yi-Yang]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Xu Kun]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 8 ] [Cao Tian]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 9 ] [Liu Jiu-Cheng]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

通讯作者信息:

  • [Wei Si-Min]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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来源 :

CHINESE PHYSICS LETTERS

ISSN: 0256-307X

年份: 2012

期: 8

卷: 29

3 . 5 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:178

JCR分区:3

中科院分区:4

被引次数:

WoS核心集被引频次: 5

SCOPUS被引频次: 6

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 1

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