Cubic　boron　nitride　(c-BN)　thin　films　are　deposited　on　p-type　Si　wafers　using　radio　frequency　(RF)　sputtering　and　then　doped　by　implanting　S　ions.　The　implantation　energy　of　the　ions　is　19　keV,　and　the　implantation　dose　is　between　10(15)　ions/cm(2)　and　10(16)　ions/cm(2).　The　doped　c-BN　thin　films　are　then　annealed　at　a　temperature　between　400　degrees　C　and　800　degrees　C.　The　results　show　that　the　surface　resistivity　of　doped　and　annealed　c-BN　thin　films　is　lowered　by　two　to　three　orders,　and　the　activation　energy　of　c-BN　thin　films　is　0.18　eV.