Indium　sulfide　(In2S3)　thin　films　were　prepared　by　chemical　bath　deposition　using　the　mixed　aqueous　solutions　of　indium　chloride,　thioacetamide　and　citric　acid,　in　which　citric　acid　was　used　as　the　complexing　agent.　The　films　were　investigated　by　x-ray　diffraction　(XRD),　field　emission　scanning　electron　microscopy　(FESEM),　the　surface　roughness　automatic　tester　and　UV-visible　transmission　spectra,　respectively.　The　XRD　results　indicate　that　the　as-deposited　films　at　pH　1　and　2　are　composed　of　beta-In2S3　phase,　which　crystallize　in　cubic　structure.　The　SEM　images　show　that　the　surface　morphologies　of　In2S3　films　change　from　nanospheres　to　network-like　morphologies　with　increase　in　growth　time.　Film　thicknesses　linearly　increase　with　time　and　reach　to　balance　stability　finally.　The　ion-by-ion　growth　mechanism　is　proposed.　(c)　2012　Elsevier　Ltd.　All　rights　reserved.