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作者:

Xie, Yi-Yang (Xie, Yi-Yang.) | Kan, Qiang (Kan, Qiang.) | Xu, Chen (Xu, Chen.) (学者:徐晨) | Zhu, Yan-Xu (Zhu, Yan-Xu.) | Wang, Chun-Xia (Wang, Chun-Xia.) | Chen, Hong-Da (Chen, Hong-Da.)

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EI Scopus SCIE

摘要:

An optimization of oxide aperture diameter to match the light emission aperture (the central defect region) in the photonic crystal vertical-cavity surface-emitting laser (PhC-VCSEL) is presented in order to obtain low threshold current and high single-fundamental-mode output of the device. A 3-D finite-difference time-domain method has been applied to simulate the mode field distribution and quality factors (Q factors) of fundamental and high order transverse modes which correspond to the mode loss of the PhC-VCSEL cavity. Single-fundamental-mode operation of PhC-VCSEL with 1.7-mW output power and low threshold current of 0.7-mA is demonstrated after oxide aperture optimization.

关键词:

Low thershold current photonic crystal single-fundamental-mode vertical-cavity surface-emitting lasers (VCSELs).

作者机构:

  • [ 1 ] [Xie, Yi-Yang]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Kan, Qiang]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Xu, Chen]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Zhu, Yan-Xu]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Wang, Chun-Xia]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Chen, Hong-Da]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Xie, Yi-Yang]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 8 ] [Kan, Qiang]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 9 ] [Xu, Chen]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 10 ] [Zhu, Yan-Xu]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 11 ] [Wang, Chun-Xia]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 12 ] [Chen, Hong-Da]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

通讯作者信息:

  • [Xie, Yi-Yang]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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来源 :

IEEE PHOTONICS TECHNOLOGY LETTERS

ISSN: 1041-1135

年份: 2012

期: 6

卷: 24

页码: 464-466

2 . 6 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:178

JCR分区:1

中科院分区:2

被引次数:

WoS核心集被引频次: 14

SCOPUS被引频次: 15

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 2

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