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作者:

Zhang, Guangchen (Zhang, Guangchen.) | Feng, Shiwei (Feng, Shiwei.) (学者:冯士维) | Zhu, Hui (Zhu, Hui.) | Liu, Jing (Liu, Jing.) | Li, Jingwan (Li, Jingwan.) | Guo, Chunsheng (Guo, Chunsheng.)

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EI Scopus SCIE

摘要:

The thermal fatigue delamination interface of die attach materials in high-brightness light-emitting diodes (HB LEDs) is determined using a noninvasive approach. Failure analysis of HB LEDs containing Au80Sn20 eutectic alloy and silver paste as die attach materials is performed by monitoring the changes in the partial thermal resistances in differential structure function curves of the HB LEDs through power cycling experiments. The results suggest that delamination of the Au80Sn20 eutectic and silver paste materials occurs at the chip-to-die attach interface and die attach-to-heat sink interface, respectively, which is consistent with cross-sectional scanning electron microscope analysis.

关键词:

Light-emitting diodes (LEDs) thermal interface material structure function

作者机构:

  • [ 1 ] [Zhang, Guangchen]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Feng, Shiwei]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Zhu, Hui]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Liu, Jing]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Li, Jingwan]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Guo, Chunsheng]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China

通讯作者信息:

  • [Zhang, Guangchen]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China

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来源 :

IEEE PHOTONICS TECHNOLOGY LETTERS

ISSN: 1041-1135

年份: 2012

期: 5

卷: 24

页码: 398-400

2 . 6 0 0

JCR@2022

ESI学科: PHYSICS;

JCR分区:1

中科院分区:2

被引次数:

WoS核心集被引频次: 6

SCOPUS被引频次: 12

ESI高被引论文在榜: 0 展开所有

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