Sputter-deposited　amorphous　films　of　a　phase-change　material　(Ge2Sb2Te5)　were　prepared　with　various　magnetron　sputtering　powers　to　determine　its　influence.　Microscopic　characteristics　indicate　that　the　sputtering　power　affects　the　film　morphology:　high　sputtering　powers　lead　to　inhomogeneous　domain-like　patterns.　The　transition　temperature　from　a　metastable　phase　to　a　hexagonal　phase　decreased　as　the　sputtering　power　increased.　However,　an　analysis　of　the　radial　distribution　functions　indicates　that　the　sputtering　power　did　not　have　a　distinct　influence　on　the　inner　atomic　structure　of　the　amorphous　phase.　Therefore,　a　low　sputtering　power　is　beneficial　to　improve　the　quality　of　sputtered　amorphous　films.　(C)　2012　The　Electrochemical　Society.　[DOI:　10.1149/2.024206esl]　All　rights　reserved.