Dielectric　distributed　Bragg　reflectors　(DDBRs)　with　SiO2/Si3N4　are　grown　by　PECVD　alternately.　For　the　etching　of　DDBR,　dry　and　wet　etching　methods　are　both　used.　The　reflectivity　of　DDBR　is　calculated　by　transfer　matrix　method,　and　the　high　performance　DDBR　structure　is　fabricated　to　obtain　optimal　reliability,　we　find　that　the　enhancement　factor　along　the　cavity　axis　and　the　integrated　emission　enhancement　factor　of　RCLED　with　1.5　RC　DDBR　are　1.058　and　1.5　respectively,　a　full　width　at　half　maximum　is　10.5　nm　by　PL　analysis.　Then,　high　performance　RCLEDs　are　fabricated　by　using　an　optimal　DDBR　structure.　The　devices　with　DDBR　show　many　advantages:　a　lower　turn-on　voltage　of　1.78　V,　under　20　mA　injection　current,　the　output　power　and　the　luminous　efficiency　of　the　device　with/without　DDBR　gain　the　improvements　of　27.7%　and　26.8%　respectively,　under　0-100　mA　injection　current,　the　output　power　has　unconspicuous　downtrend,　better　characteristic　saturation　of　optical　power　and　temperature　stability.