The　metal　organic　deposition　(MOD)　method　was　used　for　the　epitaxial　growth　of　the　CeO2/La2Zr2O7(LZO)/LZO　seed　layer　structure　on　a　cube-textured　Ni5W　substrate　layer　by　layer.　The　material　phase　and　the　macro-orientations　were　analyzed　by　XRD.　The　surface　morphology　and　the　blocking　performance　of　the　buffer　layer　were　investigated　by　SEM　and　AES.　The　grain　orientation　and　the　crystallographic　growth　mode　of　the　CeO2　layer　were　first　characterized　by　electron　backscattering　diffraction　(EBSD).　The　uniformly　distributed　islanded　LZO　seed　layer　optimized　both　the　in-plan　and　the　out-plan　orientation　of　the　CeO2/LZO　buffer　layers,　and　the　CeO2/LZO　buffer　layers　with　a　thickness　of　175　nm　acted　as　an　efficient　Ni,W　barrier.　The　EBSD　analysis　indicated　that　the　crystallographic　orientation　of　each　layer　can　be　obtained　at　various　accelerating　voltages　for　the　multilayer　sample,　the　percentage　of　{001}＜　110　＞　rotated　cube　texture　of　CeO2　layer　reaching　97.4%　at　the　accelerating　voltage　of　15　kV,　thus　showing　epitaxial　deposition　with　a　high　texture.