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[期刊论文]

Preparation and electric field driven magnetoelectric effect for multiferroic La2/3Sr1/3MnO3/BaTiO3 composite films

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作者:

Li Ting-Xian (Li Ting-Xian.) | Zhang Ming (Zhang Ming.) | Wang Guang-Ming (Wang Guang-Ming.) | 展开

收录:

Scopus SCIE PKU CSCD

摘要:

Using pulsed laser deposition, multiferroic La2/3Sr1/3MnO3(LSMO)/BaTiO3(BTO) composite films are deposited on LaAlIO3(LAO) (001) substrate. X-ray diffraction results show that LSMO and BTO films exhibit only (001) orientation. Film smoothness is verified by their low root-mean-square surface roughness values as 1.4 nm from atomic force microscope study. The magnetic and the electric properties of these composite films are investigated. Furthermore, the variations of resistivity and metal-insulator transition temperature T-MI of LSMO, induced by the external electric field, are studied. The resisitivity is reduced while the T-MI is enhanced for hole accumulation state which is induced by negative electric field across ETO layer. In contrast, the resistivity is enhanced while the T-MI is reduced for hole depletion state, which shows coupling between magnetic and electric order parameters, i.e., there is a magnetoelectric effect induced by electric field.

关键词:

pulsed laser deposition magnetoelectric effect ferromagnetic/ferroelectric heterostructure

作者机构:

  • [ 1 ] [Li Ting-Xian]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Zhang Ming]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Wang Guang-Ming]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Guo Hong-Rui]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Yan Hui]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Li Kuo-She]Gen Res Inst Nonferrous Met, Natl Engn Res Cent Rare Earth Mat, Beijing 100088, Peoples R China

通讯作者信息:

  • [Zhang Ming]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

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来源 :

ACTA PHYSICA SINICA

ISSN: 1000-3290

年份: 2011

期: 8

卷: 60

1 . 0 0 0

JCR@2022

ESI学科: PHYSICS;

JCR分区:2

中科院分区:4

被引次数:

WoS核心集被引频次: 1

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