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[期刊论文]

Emission mechanism of high current density scandia-doped dispenser cathodes

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Author:

Wang, Yiman (Wang, Yiman.) | Wang, Jinshu (Wang, Jinshu.) (Scholars:王金淑) | Liu, Wei (Liu, Wei.) | Unfold

Indexed by:

EI Scopus SCIE

Abstract:

The emission mechanism of scandia-doped dispenser (SDD) cathodes is characterized based on systematic investigation of microstructure, surface behavior, evaporation, and emission. High current density SDD cathodes have been developed in recent years to meet the requirements of advanced vacuum electron devices. Space charge limited current densities of over 100 A/cm(2) have been reliably reached at a temperature of 950 degrees C-b. SDD cathodes are composed of a tungsten matrix with submicron structure and uniformly dispersed materials containing Sc, Ba, Ca, Al, and O as nanosized particulates in the matrix. The authors conclude that the copious electron emission from this cathode type results from a layer of Ba-Sc-O on W formed after activation on top of the matrix. This layer is about 100 nm thick and maintains a stable composition over its lifespan. Its emission can be explained in terms of a semiconductor layer with characteristics that differ from a metal-like emission model. The Ba-Sc-O layer is formed by codiffusion of Sc, Ba, and O (generated inside the W-matrix) to the surface of the W-matrix during activation. Furthermore, this layer guarantees a low evaporation rate of emission-relevant materials and thus enables a longer lifespan. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3609251]

Keyword:

evaporation electron field emission cathodes nanoparticles space-charge-limited conduction vacuum microelectronics chemical interdiffusion current density crystal microstructure

Author Community:

  • [ 1 ] [Wang, Yiman]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Wang, Jinshu]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Liu, Wei]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Zhang, Xizhu]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Li, Lili]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Wang, Yiman]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100124, Peoples R China

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Source :

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

ISSN: 2166-2746

Year: 2011

Issue: 4

Volume: 29

1 . 4 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 27

SCOPUS Cited Count: 28

30 Days PV: 1

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