Homogeneous　amorphous　FexGe1-x　(0.3　＜=　x　＜=　0.5)　FMS　films　with　a　high　Fe　concentration　were　synthesized　under　thermal　nonequilibrium　condition　by　magnetron　cosputtering.　The　microstructure,　magnetism,　electrical　transport,　and　ferromagnetic　resonance　were　systematically　studied.　The　results　indicate　that　FexGe1-x　films　have　intrinsic　ferromagnetism　with　a　high　Curie　temperature　and　magnetization.　The　saturation　magnetization　can　be　well　fitted　by　Bloch＇s　spin-wave　formula　in　a　wide　temperature　range.　Quantitative　analysis　of　electrical　transport　reveals　that　FexGe1-x　FMS　films　show　conductivity　of　weakly　localized　carriers　(holes)　on　the　metallic　side.　Moreover,　the　anomalous　Hall　resistivity　is　proportional　to　the　magnetization　for　all　samples,　indicating　the　carriers　are　spin　polarized　and　the　ferromagnetism　is　intrinsic.　The　ferromagnetic　resonance　further　reveals　that　the　Fe0.5Ge0.5　thin　films　have　uniform　collective　ferromagnetism.　Therefore,　FexGe1-x　ferromagnetic　semiconductors　with　a　high　Curie　temperature　and　magnetization　have　potential　application　in　spintronic　devices　as　a　highly　efficient　spin　injection　source.