A　new　structure　of　high-brightness　light-emitting　diodes　(LED)　is　experimentally　demonstrated.　The　thin　window　layer　is　composed　of　a　300-nm-thick　indium-tin-oxide　layer　and　a　500-nm-thick　GaP　layer　for　both　current　spreading　and　light　anti-reflection.　The　two　coupled　distributed　Bragg　reflectors　(DBRs)　with　one　for　reflecting　normal　incidence　light　and　the　other　for　reflecting　inclined　incidence　light　which　is　emitted　to　the　GaAs　substrate　are　employed　in　the　LED　fabrication.　The　coupled　DBRs　in　the　LED　can　provide　high　reflectivity　with　wide-angle　reflection.　The　efficiency-enhanced　AlGaInP　LED　has　the　luminance　intensity　increase　of　more　than　50%　compared　with　conventional　LEDs　and　high　reliability　with　the　saturation　current　130　mA.