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作者:

Gao, M. M. (Gao, M. M..) | Suo, H. L. (Suo, H. L..) (学者:索红莉) | Grivel, J. -C. (Grivel, J. -C..) | Zhao, Y. (Zhao, Y..) (学者:赵艳) | Gao, P. K. (Gao, P. K..) | Liu, M. (Liu, M..) | Ma, L. (Ma, L..)

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EI Scopus SCIE

摘要:

It is difficult to obtain a sharp cube texture in the Ni-9.3at.% W substrate used for coated conductors due to its low stacking fault energy. In this paper, the traditional cold rolling procedure was optimized by introducing an intermediate recovery annealing. The deformation texture has been improved after three recovery annealing cycles at 500 degrees C for 2 h during the cold rolling process. After optimized recrystallization annealing, a Ni-9.3at.% substrate with a cube texture content of 87.7% (< 10 degrees) has been obtained. The effect of the intermediate annealing on cube texture formation is attributed to the improved deformation texture and to the enhanced pre-existing cube oriented structure in the deformed matrix.

关键词:

Coated conductor cube texture intermediate annealing substrate

作者机构:

  • [ 1 ] [Gao, M. M.]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Suo, H. L.]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Gao, P. K.]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Liu, M.]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Ma, L.]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Gao, M. M.]Tech Univ Denmark, Mat Res Div, Riso Natl Lab Sustainable Energy, DK-4000 Roskilde, Denmark
  • [ 7 ] [Grivel, J. -C.]Tech Univ Denmark, Mat Res Div, Riso Natl Lab Sustainable Energy, DK-4000 Roskilde, Denmark
  • [ 8 ] [Zhao, Y.]Tech Univ Denmark, Mat Res Div, Riso Natl Lab Sustainable Energy, DK-4000 Roskilde, Denmark

通讯作者信息:

  • [Gao, M. M.]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

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来源 :

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY

ISSN: 1051-8223

年份: 2011

期: 3

卷: 21

页码: 2969-2972

1 . 8 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:182

JCR分区:2

中科院分区:3

被引次数:

WoS核心集被引频次: 13

SCOPUS被引频次:

ESI高被引论文在榜: 0 展开所有

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