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作者:

Zhang, Zili (Zhang, Zili.) | Suo, Hongli (Suo, Hongli.) (学者:索红莉) | Ma, Lin (Ma, Lin.) | Liu, Min (Liu, Min.) | Zhang, Teng (Zhang, Teng.) | Zhou, Meiling (Zhou, Meiling.)

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EI Scopus SCIE

摘要:

In this work, the effect of doping with 5% to 20% poly zinc acrylate (PZA) complexes on MgB2 phase formation was studied. The changes of the lattice parameter and the amount of substituted carbon in the microstructure as well as the critical temperature and the critical current density (J (c)) of bulk MgB2 have been studied systematically. Both differential thermal analysis-thermogravimetric (DTA-TG) analysis and infrared (IR) spectrometry results show that the PZA was decomposed between 400A degrees C and 600A degrees C, and the main decomposition products were carbonized polymers and ZnO. The lattice parameter a in all PZA-doped MgB2 samples was decreased by different degrees, which indicates gradual substitution of carbon on the boron sites in the MgB2 crystal structure. Compared with the undoped sample, the J (c) values of all the doped samples were enhanced by about an order of magnitude under high magnetic fields. The J (c) value of the MgB2 sample with 20% PZA doping sintered at 800A degrees C for 1 h reached 8 kA/cm(2) at 5 K and 8 T. Transmission electron microscopy (TEM) images revealed a considerable amount of second-phase particles of similar to 5 nm size, and a high density of dislocations was observed in the MgB2 grains.

关键词:

critical current density MgB2 poly zinc acrylate complexes

作者机构:

  • [ 1 ] [Zhang, Zili]Beijing Univ Technol, Key Lab Adv Funct Mat, Minist Educ, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Suo, Hongli]Beijing Univ Technol, Key Lab Adv Funct Mat, Minist Educ, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Ma, Lin]Beijing Univ Technol, Key Lab Adv Funct Mat, Minist Educ, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Liu, Min]Beijing Univ Technol, Key Lab Adv Funct Mat, Minist Educ, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Zhang, Teng]Beijing Univ Technol, Key Lab Adv Funct Mat, Minist Educ, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Zhou, Meiling]Beijing Univ Technol, Key Lab Adv Funct Mat, Minist Educ, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

通讯作者信息:

  • [Zhang, Zili]Beijing Univ Technol, Key Lab Adv Funct Mat, Minist Educ, Coll Mat Sci & Engn, 100 Pingleyuan, Beijing 100124, Peoples R China

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来源 :

JOURNAL OF ELECTRONIC MATERIALS

ISSN: 0361-5235

年份: 2011

期: 6

卷: 40

页码: 1369-1376

2 . 1 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:290

JCR分区:2

中科院分区:3

被引次数:

WoS核心集被引频次: 7

SCOPUS被引频次: 7

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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