A　tunable　oxide-confined　AlGaAs/GaAs　resonant-cavity　light-emitting　diode　(RCLED)　with　a　wide-range　tuning　wavelength　was　demonstrated.　A　quarter-wave　stack　as　a　movable　Microelectronic　system　(MEMS)-bridge　was　used　and　realized　a　27　nm　tuning　range　from　a　resonance　of　972　nm　to　945　nm　and　the　corresponding　bias　between　the　top　bridge　and　the　bottom　mirror　increased　from　0　-　23　V.　The　tuning　efficiency　of　delta　lambda/lambda(0)　reached　2.8%.　The　spectral　and　the　mechanical　characteristics　of　the　MEMS-tunable　RCLED　are　also　discussed,　and　the　photon　lifetime　in　the　FP　cavity　was　modulated　in　period　by　the　bridge　displacement.