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作者:

Cheng, Y. (Cheng, Y..) | Suo, H. (Suo, H..) | Gao, M. (Gao, M..) | Liu, M. (Liu, M..) | Ma, L. (Ma, L..) | Zhou, M. (Zhou, M..) | Ji, Y. (Ji, Y..)

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EI Scopus SCIE

摘要:

La2Zr2O7 (LZO) buffer layers derived by metal organic deposition (MOD) were epitaxially grown on cube textured Ni5W substrates modified with an island-distributed LZO seed layer, and electron backscattered diffraction (EBSD) was employed to characterize the crystallographic relationship of the {0 0 1}< 1 1 0 > rotated cube textured LZO grains with respect to the {0 0 1}< 1 0 0 > cube textured Ni5W substrate. The uniformly distributed, islanded seed layer can effectively optimize the orientation of the double-layered LZO films, as proved by X-ray diffraction and EBSD analyses. It is concluded that the accelerating voltage is crucial for determinating the crystallographic orientation of the multilayer sample. Information about the epi-layer and the substrate was obtained at different accelerating voltages, which revealed, in particular, a superposed pattern of both layers. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

关键词:

Accelerating voltage Cube texture EBSD La2Zr2O7 Seed layer

作者机构:

  • [ 1 ] [Cheng, Y.]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Suo, H.]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Gao, M.]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Liu, M.]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Ma, L.]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Zhou, M.]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 7 ] [Ji, Y.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China

通讯作者信息:

  • [Suo, H.]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

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来源 :

ACTA MATERIALIA

ISSN: 1359-6454

年份: 2011

期: 7

卷: 59

页码: 2823-2830

9 . 4 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:290

JCR分区:1

中科院分区:1

被引次数:

WoS核心集被引频次: 7

SCOPUS被引频次: 7

ESI高被引论文在榜: 0 展开所有

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