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作者:

Liu, X. Q. (Liu, X. Q..) | Li, X. B. (Li, X. B..) | Zhang, L. (Zhang, L..) | Cheng, Y. Q. (Cheng, Y. Q..) | Yan, Z. G. (Yan, Z. G..) | Xu, M. (Xu, M..) | Han, X. D. (Han, X. D..) (学者:韩晓东) | Zhang, S. B. (Zhang, S. B..) | Zhang, Z. (Zhang, Z..) | Ma, E. (Ma, E..)

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摘要:

Using electron microscopy and diffraction techniques, as well as first-principles calculations, we demonstrate that as much as 35% of the total Ge atoms in the cubic phase of Ge2Sb2Te5 locate in tetrahedral environments. The Ge-vacancy interactions play a crucial stabilizing role, leading to Ge-vacancy pairs and the sharing of vacancies that clusters tetrahedral Ge into domains. The Ge2Sb2Te5 structure with coexisting octahedral and tetrahedral Ge produces optical and structural properties in good agreement with experimental data and explains the property contrast as well as the rapid transformation in this phase-change alloy.

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作者机构:

  • [ 1 ] [Liu, X. Q.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
  • [ 2 ] [Zhang, L.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
  • [ 3 ] [Yan, Z. G.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
  • [ 4 ] [Han, X. D.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
  • [ 5 ] [Zhang, Z.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
  • [ 6 ] [Li, X. B.]Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China
  • [ 7 ] [Zhang, S. B.]Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China
  • [ 8 ] [Cheng, Y. Q.]Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
  • [ 9 ] [Xu, M.]Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
  • [ 10 ] [Ma, E.]Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
  • [ 11 ] [Zhang, S. B.]Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
  • [ 12 ] [Zhang, Z.]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 13 ] [Zhang, Z.]Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China

通讯作者信息:

  • [Liu, X. Q.]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China

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来源 :

PHYSICAL REVIEW LETTERS

ISSN: 0031-9007

年份: 2011

期: 2

卷: 106

8 . 6 0 0

JCR@2022

ESI学科: PHYSICS;

JCR分区:1

中科院分区:1

被引次数:

WoS核心集被引频次: 68

SCOPUS被引频次: 76

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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