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作者:

Guan Bao-Lu (Guan Bao-Lu.) | Guo Xia (Guo Xia.) (学者:郭霞) | Zhang Jing-Lan (Zhang Jing-Lan.) | Ren Xiu-Juan (Ren Xiu-Juan.) | Guo Shuai (Guo Shuai.) | Li Shuo (Li Shuo.) | Chuai Dong-Xu (Chuai Dong-Xu.) | Shen Guang-Di (Shen Guang-Di.)

收录:

Scopus SCIE PKU CSCD

摘要:

Based on asymmetric one-dimensional photonic crystal structure, a dual-wavelength vertical-cavity surface-emitting laser (VCSEL) with modified standing wave field distribution has been constructed. The defect layer is Al0.8Ga0.2As with 5 lambda/4 thickness. Specifically, the dual-wavelength output spectrum of the VCSEL has low absorption loss, easy wavelength adjustment and same output direction. In addition, the two wavelengths and their spacing could be tuned by changing the refractive index contrast of the asymmetric PC structure and the thickness of defect layer. Such dual-VCSEL structure can be applied in optical bistable switches, amplifiers, modulators and detectors, etc..

关键词:

dual-wavelength photonic crystal gap VCSEL

作者机构:

  • [ 1 ] [Guan Bao-Lu]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Guo Xia]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Zhang Jing-Lan]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Ren Xiu-Juan]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Guo Shuai]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Li Shuo]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Chuai Dong-Xu]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 8 ] [Shen Guang-Di]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

通讯作者信息:

  • 郭霞

    [Guo Xia]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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来源 :

ACTA PHYSICA SINICA

ISSN: 1000-3290

年份: 2011

期: 1

卷: 60

1 . 0 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:182

JCR分区:2

中科院分区:4

被引次数:

WoS核心集被引频次: 2

SCOPUS被引频次:

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 2

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