CuAlO2　films　were　sputtered　on　quartz　substrates　at　different　oxygen　partial　pressures　(OPP)　and　carried　out　the　annealing　at　900　degrees　C　for　5　h　in　N-2　ambient.　The　structural　properties　of　these　films　have　been　studied　in　detail　by　X-ray　diffraction,　Raman　spectroscopy,　and　atomic　force　microscopy.　Annealed　CuAlO2　films　are　grown　along　the　(0　0　1)　preferential　orientation.　The　film　deposited　at　20%　OPP　demonstrates　the　excellent　crystalline　behavior　and　the　smallest　electrical　resistivity　(41.8　Omega　cm).　At　higher　OPP,　the　crystalline　behavior　begins　to　degenerate　up　to　the　amorphous　state　at　60%　OPP,　and　some　micro-caves　presented　in　the　film　surface　become　larger　and　deeper　with　the　increase　in　OPP.　We　believe　that　the　negative　thermal　expansion　behavior　associated　with　excess　oxygen　atoms　is　the　primary　responsibility　for　the　change　in　structural　properties.　(C)　2010　Elsevier　B.V.　All　rights　reserved.