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[期刊论文]

Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions

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作者:

Wang, Ke (Wang, Ke.) | Wang, Shu (Wang, Shu.) (学者:王术)

收录:

Scopus SCIE

摘要:

In this paper the limit of vanishing Debye length in a bipolar drift-diffusion model for semiconductors with physical contact-insulating boundary conditions is studied in one-dimensional case. The quasi-neutral limit (zero-Debye-length limit) is proved by using the asymptotic expansion methods of singular perturbation theory and the classical energy methods. Our results imply that one kind of the new and interesting phenomena in semiconductor physics occurs. (C) 2010 Elsevier Inc. All rights reserved.

关键词:

Quasi-neutral limit Singular perturbation Physical contact-insulating boundary conditions Drift-diffusion equations

作者机构:

  • [ 1 ] [Wang, Ke]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 2 ] [Wang, Shu]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China

通讯作者信息:

  • 王术

    [Wang, Shu]Beijing Univ Technol, Coll Appl Sci, Ping Le Yuan 100, Beijing 100124, Peoples R China

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来源 :

JOURNAL OF DIFFERENTIAL EQUATIONS

ISSN: 0022-0396

年份: 2010

期: 12

卷: 249

页码: 3291-3311

2 . 4 0 0

JCR@2022

ESI学科: MATHEMATICS;

JCR分区:1

中科院分区:2

被引次数:

WoS核心集被引频次: 3

SCOPUS被引频次: 1

近30日浏览量: 1

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