Through　a　facile　sublimation　method,　high-quality　GaN　nanowires　with　a　length　of　several　hundred　micrometers　were　densely　grown　on　amorphous　substrates.　The　morphology　and　single-crystalline　hexagonal　structure　of　the　GaN　nanowires　were　characterized.　Photoluminescence　of　the　nanowires　was　studied,　and　a　near-band-gap　emission　of　wurtzite　GaN　was　observed,　indicating　good　optical　quality　of　the　GaN　nanowires.　Individual　GaN　nanowire　devices　were　fabricated,　and　their　photoconductivity　and　electrical　transport　properties　were　investigated.　The　results　reveal　that　the　sublimation-grown　GaN　nanowires　possess　outstanding　UV　sensitivity　and　an　n-type　gating　effect.