In　this　paper　AlGaInP　light　emitting　diodes　with　different　types　of　electrodes:　Au/Zn/Au-ITO　Au/Ti-ITO　Au/Ge/Ni-ITO　and　Au-ITO　are　fabricated.　The　photoelectricity　properties　of　those　LEDs　are　studied.　The　results　show　that　the　Au/Zn/Au　electrode　greatly　improves　the　performance　of　LEDs　compared　with　the　other　electrodes.　Because　the　Au/Zn/Au　electrode　not　only　forms　a　good　Ohmic　contact　with　indium　tin　oxide　(ITO),　but　also　reduces　the　specific　contact　resistances　between　ITO　and　GaP,　which　are　1.273x10(-6)　Omega.cm(2)　and　1.743x10(-3)　Omega.cm(2)　between　Au/Zn/Au-ITO　and　ITO-GaP　respectively.　Furthermore,　the　textured　Zn/Au-ITO/Zn　electrode　is　designed　to　improve　the　performances　of　LEDs,　reduce　the　forward-voltage　of　the　LED　from　1.93　to　1.88　V,　and　increase　the　luminous　intensity　of　the　LEDs　from　126　to　134　mcd　when　driven　at　20　mA.