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摘要:
We studied the room temperature UV emission of ZnO films with different defect densities which is fabricated by KrF laser irradiation process. Iris shown room temperature UV photoluminescence of ZnO film is composed of contribution from free-exciton (FX) recombination and its longitudinal-optical phonon replica (FX-LO)(1LO, 2LO). With increase of the defect density, the FX emission decreased and FX-LO emission increased dramatically; and the relative strengths of FX to FX-LO emission intensities determine the peak position and intensity of UV emission. What is more, laser irradiation with moderate energy density could induce the crystalline ZnO film with very flat and smooth surface. This investigation indicates that KrF laser irradiation could effectively modulate the exciton emission and surface morphology, which is important for the application of high performance of UV emitting optoelectronic devices. (C) 2010 Elsevier B.V. All rights reserved.
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来源 :
SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY
ISSN: 1386-1425
年份: 2010
期: 3-4
卷: 76
页码: 336-340
4 . 4 0 0
JCR@2022
ESI学科: CHEMISTRY;
JCR分区:2
中科院分区:3