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Abstract:
定性分析了GaN基LED的电流扩展效应,发现电流密度和电流横向扩展的有效长度对电流均匀扩展有很大影响.基于此,对GaN基大功率LED提出了优化的电极结构,以减缓电流拥挤效应,降低器件串联电阻.通过用红外热像仪测量器件表面的温度分布,发现具有优化的环形插指电极结构的GaN基大功率LED表面温度分布比较均匀,证明芯片接触处电流扩展均匀,局部电流密度降低,减小了焦耳热的产生,增强了器件的可靠性.
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Source :
物理学报
ISSN: 1000-3290
Year: 2008
Issue: 1
Volume: 57
Page: 472-476
1 . 0 0 0
JCR@2022
ESI Discipline: PHYSICS;
JCR Journal Grade:2
Cited Count:
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count: 15
Chinese Cited Count:
30 Days PV: 0
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