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作者:

He Hongwen (He Hongwen.) | Xu Guangchen (Xu Guangchen.) | Guo Fu (Guo Fu.) (学者:郭福)

收录:

SCIE PKU CSCD

摘要:

In this paper, microstructural evolution of eutectic SnBi solder joint with current density of 1.5x10(4) A/cm(2) after current stressing for 10 min and 30 min respectively. Microview MVC2000 image collector was applied to monitor the microstructural evolution of the solder joint during experimental process. Local melting of the solder joint occurred after current stressing for 110 s, and then it was in molten state after current stressing for 130 s. Results indicated that after current stressing for 10min, a large number of bump-shaped Bi phases were formed near the anode and the band-shaped Bi phases were form near the cathode. However after polishing, the microstructure at the cathode and anode remained the same. Many Bi particles were formed in the solder matrix and voids appeared at the cathode interface. After current stressing for 30 min, the uniform microstructure of eutectic SnBi had been disturbed. Bi accumulation occurred at the anode, and cracks appeared in the Bi accumulation region. It should be noted that IMC layer at the anode interface was thicker that that at the cathode interface after current stressing.

关键词:

IMC layer electromigration Bi accumulation

作者机构:

  • [ 1 ] [He Hongwen]Beijing Univ Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Xu Guangchen]Beijing Univ Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Guo Fu]Beijing Univ Technol, Beijing 100124, Peoples R China

通讯作者信息:

  • [He Hongwen]Beijing Univ Technol, Beijing 100124, Peoples R China

电子邮件地址:

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来源 :

RARE METAL MATERIALS AND ENGINEERING

ISSN: 1002-185X

年份: 2010

卷: 39

页码: 31-34

0 . 7 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

JCR分区:4

中科院分区:4

被引次数:

WoS核心集被引频次: 1

SCOPUS被引频次:

ESI高被引论文在榜: 0 展开所有

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