High-performance　selector　devices　are　essential　for　emerging　nonvolatile　memories　to　implement　high-density　memory　storage　and　large-scale　neuromorphic　computing.　Device　uniformity　is　one　of　the　key　challenges　which　limit　the　practical　applications　of　threshold　switching　selectors.　Here,　high-uniformity　threshold　switching　HfO2-based　selectors　are　fabricated　by　using　e-beam　lithography　to　pattern　controllable　Ag　nanodots　(NDs)　with　high　order　and　uniform　size　in　the　cross-point　region.　The　selectors　exhibit　excellent　bidirectional　threshold　switching　performance,　including　low　leakage　current　(＜1　pA),　high　on/off　ratio　(＞10(8)),　high　endurance　(＞10(8)cycles),　and　fast　switching　speed　(approximate　to　75　ns).　The　patterned　Ag　NDs　in　the　selector　help　control　the　number　of　Ag　atoms　diffusing　into　HfO(2)and　confine　the　positions　to　form　reproducible　filaments.　According　to　the　statistical　analysis,　the　Ag　NDs　selectors　show　much　smaller　cycle-to-cycle　and　device-to-device　variations　(C-V＜　10%)　compared　to　control　samples　with　nonpatterned　Ag　thin　film.　Furthermore,　when　integrating　the　Ag　NDs　selector　with　resistive　switching　memory　in　one-selector-one-resistor　(1S1R)　structure,　the　reduced　selector　variation　helps　significantly　reduce　the　bit　error　rate　in　1S1R　crossbar　array.　The　high-uniformity　Ag　NDs　selectors　offer　great　potential　in　the　fabrication　of　large-scale　1S1R　crossbar　arrays　for　future　memory　and　neuromorphic　computing　applications.