Thermal　effect　is　one　of　the　most　important　factors　limiting　the　photoluminescence　performances　of　semiconductor　devices.　With　the　increase　of　temperature,　the　PL　intensity　decreases　gradually　due　to　the　effect　of　thermal　quenching.　However,　the　abnormal　negative　thermal　quenching　effect　has　been　found　in　many　semiconductor　materials　in　recent　years,　e.g.　ZnO,　BiFeO3,　InPBi,　etc.　This　effect　is　generally　considered　as　the　sign　of　the　existence　for　middle/local　energy　state　in　the　electron-hole　recombination　process,　which　usually　needs　to　be　confirmed　by　the　temperature-dependent　PL　spectra.　Here,　we　report　the　thermal　regulation　mechanism　of　photoluminescence　in　intrinsic　acceptor-rich　ZnO　(A-ZnO)　microtubes　grown　by　the　optical　vapour　supersaturated　precipitation　method.　The　grown　A-ZnO　microtube　with　a　length　of　5　mm　and　diameter　of　100　mu　m　has　regular　hexagonal　cross-section　morphology.　Its　optical　band　gap　at　room　temperature　is　about　3.30　eV.　With　the　increase　of　temperature,　the　PL　intensity　of　A-ZnO　microtube　exhibits　an　abnormal　behavior　from　the　thermal　quenching　to　the　negative　thermal　quenching　and　then　to　the　thermal　quenching.　The　thermal　quenching　effect　at　80-200　K　is　associated　with　regurgitation/ionization　of　shallow　donor,　thermal　ionization　of　free　exciton,　and　conversion　of　neutral　acceptor　bound　exciton.　The　negative　thermal　quenching　effect　at　200-240　K　is　associated　with　thermal　excitation　of　electrons　in　a　deep　level　trap　of　488　meV　below　the　conduction　band　minimum　(CBM).　The　thermal　quenching　effect　at　240-470　K　is　related　to　Shockley-Read-Hall　recombination　based　on　the　non-radiative　recombination　center　of　628　meV　below　the　CBM.　The　non-radiative　recombination　center　and　trap　level　are　far　from　the　acceptor　level　of　A-ZnO　microtube,　which　may　be　related　to　the　deep-level　defect　of　oxygen　vacancy　in　the　intrinsic　A-ZnO　microtube.　This　work　establishes　the　temperature-dependent　transition　model　of　photo-generated　carriers　and　reveals　the　thermal　regulation　mechanism　of　PL　for　the　A-ZnO　microtubes.　It　provides　a　novel　platform　for　designing　the　high-temperature　and　high-efficiency　ZnO-based　photoelectric　devices.