(Ta2O5)1-x(TiO2)x　system　ceramics　has　been　studied　intensively　as　a　promising　dielectric　material　for　next　generation　of　high　density　dynamic　random　access　memories　instead　of　SiO2　and　Si3N4.　The　(Ta2O5)1-x(TiO2)x　ceramics　with　highly　dielectric　anisotropy　can　be　obtained　by　applying　relatively　higher　cold　uniaxial　pressure　(200　MPa)　and　a　high　sintering　temperature　(1550　degrees　C)　to　the　cylindrical　pellet.　The　dielectric　permittivity　of　(Ta2O5)1-x(TiO2)x　ceramics　can　be　dramatically　enhanced　1.5-1.8　times　than　the　conventional　disk　specimen　by　cutting　the　cylindrical　pellet　parallel　to　the　pressing　axis.　The　mechanism　of　enhancement　of　dielectric　constants　is　involved　in　the　appearance　of　Hmon-TiTa18O47　solid-solution　phase,　preferentially　grain　growth　and　densification　in　(Ta2O5)1-x(TiO2)x　ceramics.　It　is　also　suggested　that　the　present　work　can　be　developed　a　sort　of　technology　to　enhance　the　physical　properties　of　Ta2O5-based　functional　ceramics,　esp.　in　dielectric　properties.