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作者:

Guo, Fu (Guo, Fu.) (学者:郭福) | Xu, Guangchen (Xu, Guangchen.) | He, Hongwen (He, Hongwen.) | Zhao, Mengke (Zhao, Mengke.) | Sun, Jia (Sun, Jia.) | Wang, C. Henry (Wang, C. Henry.)

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EI Scopus SCIE

摘要:

Numerous electronic system failures have been attributed to short circuits caused by metal whiskers that bridged closely spaced circuit elements when they were maintained in a high-current-density environment. Typically, in single-phase interconnect materials, atoms are driven from the cathode to the anode and a compressive stress can build up at the anode end of the stripe, which can induce the formation of whiskers and hillocks. However, the electronic solders used in interconnects are multiphase materials where primary and secondary diffusion atoms/ions exist. In order to accelerate the growth of whiskers and hillocks, a high current density (10(4) A/cm(2)) combined with high ambient temperatures (80A degrees C) was applied to eutectic Sn-Bi solder joints. Metal whiskers and hillocks were observed on the overflowed solder film above the Cu substrate. However, in the absence of the electric field, metal whiskers and hillocks could also be squeezed out from the solder reaction films after several days of isothermal aging (125A degrees C), demonstrating that the chemical reaction between Sn atoms and Cu atoms can provide the driving force for the formation and growth of metal whiskers and hillocks.

关键词:

Electromigration isothermal aging metal hillock metal whisker

作者机构:

  • [ 1 ] [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 2 ] [Xu, Guangchen]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 3 ] [He, Hongwen]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 4 ] [Zhao, Mengke]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 5 ] [Sun, Jia]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 6 ] [Xu, Guangchen]Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
  • [ 7 ] [Wang, C. Henry]Henkel Corp, Elect Grp, Irvine, CA USA

通讯作者信息:

  • 郭福

    [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China

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来源 :

JOURNAL OF ELECTRONIC MATERIALS

ISSN: 0361-5235

年份: 2009

期: 12

卷: 38

页码: 2647-2658

2 . 1 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

JCR分区:2

中科院分区:1

被引次数:

WoS核心集被引频次: 16

SCOPUS被引频次: 16

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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