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Author:

Guo, Fu (Guo, Fu.) (Scholars:郭福) | Xu, Guangchen (Xu, Guangchen.) | Sun, Jia (Sun, Jia.) | Xia, Zhidong (Xia, Zhidong.) | Lei, Yongping (Lei, Yongping.) (Scholars:雷永平) | Shi, Yaowu (Shi, Yaowu.) | Li, Xiaoyan (Li, Xiaoyan.)

Indexed by:

EI Scopus SCIE

Abstract:

The resistance of electronic interconnects made with Sn-based solders experiences significant deterioration during service in high-performance electronic products. During electromigration damage, metal atoms/ions can migrate in the direction of electron flow. Accordingly, accumulation of metal atoms/ions at the anode interface can induce surface bulging. On the other hand, depletion of metal atoms/ions at the cathode interface can induce surface dimpling. In addition, the different alpha-rich and beta-rich phases in a binary eutectic system were found to separate in the bulk region of eutectic Sn-Bi solder joints. Such atomic movement leads to complex interactions between the resistance changes of electronic solder joints during the different stages of electromigration. In order to clarify such scenarios, a LabVIEW(A (R))-controlled system was employed to quantitatively measure the instantaneous resistance values after an electric current was applied. This study investigated the effects of a high current density (10(4) A/cm(2)) at two different ambient temperatures (25A degrees C and 80A degrees C) on the deterioration of resistance changes during the early stage of the electromigration process.

Keyword:

eutectic Sn-Bi electromigration Resistance

Author Community:

  • [ 1 ] [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 2 ] [Xu, Guangchen]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 3 ] [Sun, Jia]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 4 ] [Xia, Zhidong]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 5 ] [Lei, Yongping]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 6 ] [Shi, Yaowu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 7 ] [Li, Xiaoyan]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
  • [ 8 ] [Xu, Guangchen]Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA

Reprint Author's Address:

  • 郭福

    [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China

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Source :

JOURNAL OF ELECTRONIC MATERIALS

ISSN: 0361-5235

Year: 2009

Issue: 12

Volume: 38

Page: 2756-2761

2 . 1 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

JCR Journal Grade:2

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 16

SCOPUS Cited Count: 16

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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